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Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties

Takeuchi, D; Makihara, K; Ohta, A; Ikeda, M; Miyazaki, S

Takeuchi, D (reprint author), Nagoya Univ, Grad Sch Engn, Nagoya, Aichi, Japan.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017; 70 ( ): 183

Abstract

We have fabricated multiple-stacked phosphorous doped Si quantum dots (P-doped Si-QDs) embedded in SiO2 on n-Si(100) structures and characterized thei......

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