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Review on analog/radio frequency performance of advanced silicon MOSFETs

Passi, V; Raskin, JP

Passi, V (reprint author), Univ Siegen, Sch Sci & Technol, Graphene Based Nanotechnol, Holderlinstr 3, D-57076 Siegen, Germany.; Passi, V (reprint author), AMO GmbH, Otto Blumenthal Str, D-2552074 Aachen, Germany.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017; 32 (12):

Abstract

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the ......

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