投稿信息
投稿信息
审稿周期
投稿命中率
审稿费用
暂无数据
版面费用
暂无数据
中国人发表比例
2023年中国人文章占该期刊总数量暂无数据 (2022年为100.00%)
自引率
15.3 %
年文章数
12925
作者需知
暂无数据
NCBI查询
偏重的研究方向
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期刊简介
稿件收录要求
稿件收录要求
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
