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Asymmetric ZnO nanostructures: Morphology controlled synthesis, intrinsic electric fields induced growth mechanism and n-butanol gas-sensing performance

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 566 ()

Three kinds of ZnO nanostructures with different morphologies have been successfully prepared by a simple solvothermal method using the mixture of pol......

Eliminate of colour center and growth of large-size Tb3Ga5O12 crystals

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 562 ()

A series of large-size TGG single crystals with 076 mm * L100 mm were grown successfully by Czochralski (Cz) method. The formation mechanism of colour......

Mechanism study of photoluminescence peak shift of transparent (In,Ga)N nanowire films detached by acid solution

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 562 ()

In this work, the acid solution has been demonstrated in detaching transparent (In,Ga)N nanowire films. The liftoff (In,Ga)N nanowire film remains sta......

Synthesis and characterization of single-crystalline TaC whiskers

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 568 ()

Tantalum carbide (TaC) whiskers, which have the same chemical composition and crystal structure as a TaC matrix, are believed to be ideal reinforcing ......

Parameter impulse control of chaos in crystal growth process

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 563 ()

Chaos occurs in the crystal growth process as an irregular swing phenomenon in the flexible shaft rotating-lifting (FSRL) system. Chaos may lead to th......

Elucidation of LiCl encapsulated Bridgman growth of AlSb crystal

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 570 ()

Aluminum antimonide (AlSb) possessing an indirect bandgap of 1.6 eV at room temperature offers a good option as a room-temperature dual-carrier radiat......

Growth of hexagonal boron nitride crystals at atmospheric pressure from Cu-Cr flux

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 562 ()

We report here the growth of hexagonal boron nitride crystals from Cu?Cr flux. The transparent crystals have a maximum size of 6 mm and a thickness of......

Crystal growth and spectroscopic properties of uranium dioxide doped LiNbO3 with multiband absorption

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 565 ()

Lithium niobate crystals have excellent photorefractive properties and possess a great development promising in holographic applications. Doping ions ......

Characterization of morphological defects related to micropipes in 4H-SiC thick homoepitaxial layers

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 568 ()

A new type of morphological defects related to substrate micropipe is observed in 4H-SiC thick homoepitaxial layers. The structure and formation mecha......

Study on the influencing factors and mechanism of calcium carbonate precipitation induced by urease bacteria

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 564 ()

Microbial induced calcium carbonate precipitation (MICP) is a widespread phenomenon in nature. In this paper, various factors affecting microbial grow......

Numerical simulation analysis on solute redistribution of In-1 wt% Sn alloy during multipass vertical zone refining process

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 565 ()

Horizontal zone refining has been widely used for the production of ultra-pure metals through solidificationinduced microsegregation effect. Current r......

Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 570 ()

The influence of resistivity for n-AlGaN is investigated by changing Si concentration, growth temperature and growth rate. It is found that the resist......

Semi-polar (11-22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 570 ()

This study addresses the difficulty of obtaining relatively low-cost semi-polar (11-22) AlN films epitaxially grown on m-plane sapphire substrates wit......

Wet etching of semi-polar (11-22) GaN on m-sapphire by different methods

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 570 ()

Wet etching methods with conventional alkali solution, molten alkali and photo-assisted alkali solution were performed on semi-polar (11-22) GaN separ......

The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy

期刊: JOURNAL OF CRYSTAL GROWTH, 2021; 572 ()

We report on the great improvement of optical properties of a InGaAs quantum well structure by inserting ultra thin GaAs layers between the InGaAs wel......

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