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Semi-polar (11-22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

Xing, K; Cheng, XY; Wang, LC; Chen, SR; Zhang, Y; Liang, HG

Xing, K (corresponding author), Hefei Univ Technol, Sch Elect Sci & Appl Phys, 193 Tunxi Rd, Hefei 230009, Peoples R China.; Zhang, Y (corresponding author), Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Jiangsu, Peoples R China.

JOURNAL OF CRYSTAL GROWTH, 2021; 570 ():

Abstract

This study addresses the difficulty of obtaining relatively low-cost semi-polar (11-22) AlN films epitaxially grown on m-plane sapphire substrates wit......

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