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The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy

Zhao, XY; Yu, WF; Han, SX; Du, AT; Lin, SW; Li, M; Cao, CF; Yang, J; Huang, H; Wang, HL; Gong, Q

Gong, Q (corresponding author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China.

JOURNAL OF CRYSTAL GROWTH, 2021; 572 ():

Abstract

We report on the great improvement of optical properties of a InGaAs quantum well structure by inserting ultra thin GaAs layers between the InGaAs wel......

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