期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (4)
Graphene containing intrinsic pores with molecular dimensions is a highly promising material for standard leak elements because of its minimal and sta......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (5)
Antimony selenide (Sb2Se3) is regarded as an excellent photovoltaic absorber material due to its suitable bandgap, large light absorption coefficient,......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (4)
This paper describes the theory and results for a new class of low-cost chemoresistive gas sensors designed for selective hydrocarbon gas detection. T......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (3)
Detection of the SARS-CoV-2 spike protein and inactivated virus was achieved using disposable and biofunctionalized functional strips, which can be co......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (5)
In this work, we report on a self-powered ultraviolet photodiode realized using lateral polarity structure (LPS) GaN films. The opposite nature of the......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (1)
A cerium hexaboride (CeB6) single crystal grown by the floating-zone method has a low work function of about 2.6 eV, and along with lanthanum hexabori......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (3)
Electron cloud is a persistent problem in operating modern accelerators. It might be eliminated by reducing the secondary electron yield (SEY), which ......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (3)
First-principles calculations are used to investigate electronic and field emission characteristics of (5, 5) capped BeO nanotubes (BeONTs), which ind......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (2)
In this work, a large size x-ray detector with a 25 mm(2) active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits o......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021; 39 (1)
ZnO thin film transistor with high-k NbLaO/SiO2 bilayer gate dielectric was fabricated by sputtering, and the temperature dependence of the electrical......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020; 38 (6)
Au-free, Ti/Al/Ta ohmic contact on the AlGaN/AlN/GaN heterostructure using low annealing temperature is studied in this paper. With SiCl(4)plasma trea......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020; 38 (6)
The modification of surface properties frequently requires the binding of suitable compounds to the original surface. Silanes or thiols can be directl......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020; 38 (6)
Vertically aligned InGaN nanorods (NRs) sandwiched between GaN layers on sapphire substrates were synthesized by photoelectrochemical (PEC) wet etchin......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020; 38 (6)
Synthetic aperture has been a common method in digital holographic microscopy resolution enhancement over the years. Multiangle illumination is one ty......
期刊： JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020; 38 (6)
The effects of cavity shapes and rounded corners on polymer filling and mold stress distributions of nanoimprint lithography are investigated using a ......
