Baidu
map

Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure

Singh, B; Rai, TN; Gola, D; Singh, K; Goel, E; Kumar, S; Tiwari, PK; Jit, S

Jit, S (reprint author), Indian Inst Technol BHU, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017; 71 ( ): 161

Abstract

The effect of ferro-electric (Fe) gate oxide on heterojunction and band-gap engineering based electro-statically doped source/drain (EDSD) double-gate......

Full Text Link


Baidu
map
Baidu
map
Baidu
map