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Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Zhang, M; Wu, F; Yu, Q; Liu, WH; Ma, RX; Xie, CS

Wu, F (corresponding author), Minist Educ China, Key Lab Informat Storage Syst, Wuhan Natl Lab Optoelect, Beijing, Peoples R China.; Wu, F (corresponding author), Huazhong Univ Sci & Technol, Engn Res Ctr Data Storage Syst & Technol, Wuhan 430074, Peoples R China.; Wu, F (corresponding author), Huazhong Univ Sci & Technol, Shenzhen Res Inst, Shenzhen 518000, Peoples R China.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021; 21 (3): 324

Abstract

Phase-change memory (PCM) as emerging non-volatile memory has attracted more attention and considered as the promising replacement of the main memory.......

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