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Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection

Tsai, YL; Chang, TC; Tsao, YC; Tai, MC; Tu, HY; Chien, YT; Jin, FY; Hao-Xuan,; Lin, YS; Ciou, FM; Lin, YH; Wu, PY; Huang, JW

Chang, TC (corresponding author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan.; Huang, JW (corresponding author), Republ China Mil Acad, Dept Phys, Kaohsiung 830, Taiwan.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021; 21 (3): 320

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