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Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

Jaud, A; Auvray, L; Kahouli, A; Abi-Tannous, T; Linas, S; Ferro, G; Brylinski, C

Auvray, L (reprint author), Univ Claude Bernard Lyon 1, CNRS, LMI, UMR 5615, F-69622 Villeurbanne, France.

JOURNAL OF CRYSTAL GROWTH, 2017; 467 ( ): 18

Abstract

Low temperature (500-800 degrees C) homoepitaxy of not intentionally doped GaN structures on GaN(0001)/Si (111) seed has been investigated by Vapor-Li......

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