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Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment

Chen, ZW; Yue, SZ; Wang, JB; Zhang, ZG; Huang, YM; Wang, L; Peng, C; Zhong, XL; Lei, ZF

Zhong, XL (corresponding author), Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China.; Peng, C; Lei, ZF (corresponding author), China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021; 21 (3): 297

Abstract

The effect of proton irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) with hydrogen treatment is studi......

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