Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors-MedSci.cn - 梅斯（MedSci）

Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors

Yazdani, H; Chevtchenko, S; Brunner, F; Trankle, G; Wurfl, J

Yazdani, H (通讯作者)，Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst gGmbH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022; 219 (8):

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