期刊： MICROELECTRONICS RELIABILITY, 2021; 123 ()
A superior figure-of-merit (FoM) 1200 V class 4H-SiC trench MOSFET with p + shielding region partially surrounded by the buried n region is proposed i......
期刊： MICROELECTRONICS RELIABILITY, 2021; 123 ()
The wafer map is obtained by testing each die in the wafer during semiconductor production for defects and marking the defective die. The classificati......
期刊： MICROELECTRONICS RELIABILITY, 2021; 118 ()
In this review, a review a of the applications of micro-Raman spectroscopy (?RS) to characterize the residual strain and/or stress in electronic packa......
期刊： MICROELECTRONICS RELIABILITY, 2021; 124 ()
Avalanche robustness in dynamic operation is one of the main obstacles to further promote the commercialization of SiC MOSFETs. In this paper, a cell-......
期刊： MICROELECTRONICS RELIABILITY, 2021; 119 ()
Moisture in the atmosphere could diffuse into plastic packaging devices, which would cause high hygro-mechanical stress and vapor stress and lead irre......
期刊： MICROELECTRONICS RELIABILITY, 2021; 124 ()
Deep Neural Networks (DNNs) have been successfully deployed in safety-critical applications due to the capability of computing in complex tasks. Becau......
期刊： MICROELECTRONICS RELIABILITY, 2021; 118 ()
The combined DC-DC power supply is widely used in communication, aerospace and other fields because of its low power consumption, high efficiency, sma......
期刊： MICROELECTRONICS RELIABILITY, 2021; 121 ()
Owing to its low cost and high efficiency, the blue light-emitting diode (LED) chip covered with the Y3Al5O12: Ce3+ (YAG) phosphor has become a mainst......
期刊： MICROELECTRONICS RELIABILITY, 2021; 121 ()
The performance of the Hodgkin-Huxley neuron circuits used in novel communication and computer systems depends on its capacitors. Thus, degradation of......
期刊： MICROELECTRONICS RELIABILITY, 2021; 124 ()
This paper analyzes the mechanism by which Single-Event-Upsets (SEUs) and Single-Event-transients (SETs) impact on the working condition of the charge......
期刊： MICROELECTRONICS RELIABILITY, 2021; 120 ()
A methodology is proposed to emulate and assess the single event effect in configuration memory on 16 nm Ultrascale+ MPSoC. The solution depends on fa......
期刊： MICROELECTRONICS RELIABILITY, 2021; 124 ()
In recent years, there has been considerable interest on the part of scientist and engineers in effectively designing accelerated degradation test, wh......
期刊： MICROELECTRONICS RELIABILITY, 2021; 121 ()
This paper presents the transient dose rate (TDR) effect of analog Delay Locked Loops (DLLs). The analog DLL circuits are built upon a previous design......
期刊： MICROELECTRONICS RELIABILITY, 2021; 124 ()
The insulated-gate bipolar transistor (IGBT) is one of the most widely used power transistors in switching and industrial control systems. Its actual ......
期刊： MICROELECTRONICS RELIABILITY, 2021; 120 ()
The impact of heavy ion energy and species on single-event upsets (SEU) sensitivity in state-of-the-art NAND Flash memories is investigated in this pa......
